Description
A high voltage switching device with MOS gate that combines the finest qualities of MOSFETs and bipolar transistors is called 20N60A4D. This device combines the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. Between 25 and 150°C, the significantly smaller on-state voltage loss scarcely varies somewhat. The IGBT being used is a TA49339 development type. The development type TA49372 diode is utilized in anti-parallel. It has designed by Fairchild. This IGBT is perfect for a variety of high voltage switching applications that operate at high frequencies and require minimal conduction losses. This gadget is designed to work with high frequency switch mode power supply.
Features
- >100 kHz Operation 390 V, 20 A
- 200 kHz Operation 390 V, 12 A
- 600 V Switching SOA Capability
-
Typical Fall Time 55 ns at TJ= 125°C
- Low Conduction Loss
- Its a lead free device
Applications
- Fast switching operations
- UPS
- SMPS
Pinout:-
1: Gate, 2: Collector, 3: Emitter
Specification
| Product | 20N60A4D |
| Brand | Fairchild |
| Type | Hyper fast diode |
| Mounting Type | Through hole |
| Pins | 3 |
| Maximum operating voltage | 600V |
| Package |
TO-247−3LD
|
| Power dissipation | 260W |
| Maximum lead temperature | 260°C |
| Fall time | 55nS |
| Frequency | 200KHz |
| Junction Temperature | 125 Degree C |
| Country of Origin | China |