Description
2SK10120 is an N-Channel silicon power MOSFET, It is a Through-hole(THD) active component that consists of three terminals Gate, Drain, and Source. In N-Channel there is the majority of electrons. These electrons moving in the channel is accountable for the flow of current in the transistor.
Applications
- Switching regulators
- UPS
- DC-DC converters
- General purpose power amplifier
Features
- High-speed switching
- Low on-resistance
- No secondary breakdown
- Low driving power
- High voltage
- V(GSS) = ±30V
Specification
| Model | 2SK1020 |
| Brand | Fuji Electric |
| Type | N-Channel MOSFET |
| Drain-source voltage (Vdss) | 500V |
| Continuous drain current (Id) | 30A |
| Pulsed drain current (Id pulse) | 92A |
| Continuous reverse drain current (Idr) | 30A |
| Gate-source peak voltage (Vgss) | ±30V |
| Max. power dissipation (Pd) | 300W |
| Operating junction temperature | 150 (degree C) |
| Storage temperature range | -55~150 (degree C) |
| Country of Origin | China |