Description
IGBT designs that do not require a punch through are the HGTG5N120BND and HGTP5N120BND. They are brand-new IGBTs that are MOS gated for high voltage switching. IGBTs combine the greatest elements of bipolar transistors and MOSFETs. This device combines the low on-state conduction loss of a bipolar transistor with the high input impedance of a MOSFET. The IGBT in use is a TA49308 development type. The TA49058 development type diode is utilized (Part number RHRD6120). The IGBT is appropriate for a variety of high-voltage switching applications that operate at moderate frequencies and require minimal conduction losses, such as drivers for solenoids, relays, and contactors, AC and DC motor controllers, and power supplies.
Features
-
Its used in switching operation
-
1200V Switching SOA Capability
-
Short Circuit Rating
-
Low leakage current
-
It has the capability to improved dv/dT
- 100% avalanche energy rated
Specification
| Model | 5N120BND |
| Type | MOSFET |
| Package | TO-247 |
| Forward current | 21A |
| Reverse Voltage | 1200V |
| Tc | 25 Degree centigrade |
| Typical fall time | 175nS |
| Operating and Storage Temperature Range | -55°C TO 150°C |
| Country of Origin | China |