Description
STP80NF70 is an N-Channel Power MOSFET. It has specifically been designed to minimize input capacitance and gate charge. The majority of electronic carriers that move in the channel are accountable for the flow of current by applying a signal to the gate that controls current conduction between source and drain. It is a through hole active component with three terminals: Gate, Drain, and Source. It is often used in advanced high-efficiency switching applications.
Features
- Exceptional DV/DT capability
- 100% avalanche tested
Specifications
Model | 80NF70 |
Brand | STMicroelectronics |
Packaging | Tube |
Transistor Polarity | N-Channel |
Drain-Source Voltage @VGS=0 (VDS) | 68V |
Gate-Source Voltage (VGS) | ±20V |
Continuous Drain Current (ID) | 98A |
Pulsed Drain Current (IDM) | 392A |
Total Dissipation | 190W |
Operating Junction and Storage Temperature | -55~175 degree C |
Country of Origin | China |