Description
BU508A is an NPN triple diffused silicon power transistor. The Collector current "Ic" is a function of the base current "Ib", a variation in base current gives a corresponding amplified variation in the collector current for a given collector-emitter voltage "Vce". It is specifically designed for use in large screen color deflection circuits.
Specifications
| Model | BU508A |
| Type | NPN |
| Collector-Base Voltage (VCBO) | 1500V |
| Collector-Emitter Voltage (VCEO) | 700V |
| Junction Temperature | 150 (degree C) |
| Storage Temperature | -55~150 (degree C) |
| Power Dissipation | 50W |
| Mounting Type | Through Hole |
| Country of Origin | China |