Description
Voltage regulator diodes utilize the reverse characteristics of a PN junction. When raising reverse voltage of PN junction diodes, high current starts flowing at a certain voltage, and constant voltage can be obtained. (This phenomenon is called breakdown and this voltage is called breakdown voltage. BVZ55 series are low-power voltage regulator diodes which come in small hermetically sealed glass SOD80 Surface-Mounted Device (SMD) package. The diodes are offered in tolerance ranges of about 5% (BZV55-C) . There are 37 different varieties in the series, with nominal working voltages ranging from 2.4 V to 75 V. This kind of voltage regulator is suitable for general regulating purposes.
Features :-
- Total power dissipation: 500mW
- Low differential resistance
- Two tolerance series: 2% and 5%
Specifications
Parameter | Values |
Model | BZV55C4V7 |
Supply Voltage | 4.4 V - 5 V |
Differential resistance | 425 W - 500 W at Iz=1 mA |
50 W - 80 W at Iz=5 mA | |
Temperature Coefficient | -3.5 mV/K – 0.2 mV/K |
Diode Capacitance | 300 pF |
Non-repetitive peak reverse current | 6.0 A |
Junction Temperature | -60°C - 200°C |
Storage Temperature | -60°C - 200°C |
Total Power Dissipation | 400 mW - 500 mW |
Forward Current | 250 mA |
Non-Repetitive Peak Reverse Power Dissipation | 40 W |
Package | SOD80 |
Country of Origin | China |