Description
This N-Channel MOSFET by Doingter uses advanced trench technology and design to provide excellent RDS(on) with a low gate charge. It can be used in various low voltage applications
Features：
1) VDS=60V, ID=50A, RDS(ON)<17mΩ @VGS=10V
2) Low gate charge
3) Green device available
4) Advanced high cell density trench technology for ultra RDS(ON)
5) Excellent package for good heat dissipation
Specification
| Model | DOD50N06 |
| Brand | Doingter |
| Drain-Source Voltage (VDS) | 60V |
| Gate-Source Voltage (VGS) | ±20V |
| Continuous Drain Current | 50A to 33A |
| Pulsed Drain Current | 200A |
| Operating Temperature | -55°C~175°C |
| Package | TO-252 |
| Quantity | 100 |
| Country of Origin | China |