Description
These N-Channel enhancement mode power field effect transistors are created using a proprietary planar stripe DMOS process developed by Fairchild. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to minimize on-state resistance, deliver improved switching performance, and withstand high energy pulses. These devices are ideal for active power factor correction and high-efficiency switched mode power supply.
Features
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Its forward current is 19A
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Its low gate charge is Typically 25nC
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Its used for fast switching operation
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Its highly reliable, low cost
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Its operating voltage is 500V
Specification
| Model | FDA18N50 |
| Type | MOSFET |
| Package | TO-3P |
| Brand | Fairchild |
| Drain Current | 19A |
| Avalanche Current | 19A |
| Total power dissipation | 239W |
| Operating and Storage Temperature Range | -55°C TO 150°C |
| Country of Origin | China |