Description
FQPF4N80 2A,800V N-CHANNEL enhancement mode power field effect transistors were created the exclusive planar stripe DMOS process developed by Fairchild.
In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. The high efficiency switch mode power supply is ideal for these devices.
Features
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Maximum operating voltage is 800V
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Its forward current is 2A
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Avalanche tested is 100%
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Its used in fast switching applications
- Improved dv/dT capability
- Low gate charge is 19nC
Specification
| Model | FQPF4N80 |
| Type | N-Channel MOSFET |
| Package | TO-220F |
| Forward current | 2A |
| Maximum lead temperature for soldering | 300°C |
| Avalanche current | 2.2A |
| Total power dissipation | 43W |
| Operating and Storage Temperature Range | -55°C TO 150°C |
| Country of Origin | China |