FUJI ELECTRIC 2SK956 N-Channel Silicon Power MOSFET

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Description

FUJI ELECTRIC 2SK956 is a N-Channel silicon power MOSFET. It is through hole(THD) active component with three terminals: Gate, Drain and Source. This device is specifically designed for high voltage, high speed applications. Off-line switching power supplies, uninterruptible power supplies, AC and DC motor controls, relays, and solenoid drivers are examples.

Datasheet

Features

  • High speed switching
  • Low on-resistance
  • No secondary breakdown
  • Low driving power
  • High voltage
  • VGSS = ±30V

Applications

  • Switching regulators
  • UPS
  • DC-DC converters
  • General purpose power amplifier
Specifications
 Model 2SK956
 Brand FUJI ELECTRIC
 Drain-Source Voltage (VDSS) 800V
 Continuous Drain-Current (ID) 9A
 Pulsed Drain-Current  26A
 Continuous Reversed Drain-Current (IDR) 9A
 Max. Power Dissipation (PD) 150W
 Operating Temperature 150°C
 Storage Temperature Range -55~150°C
 Mounting Type Through Hole
Country of Origin China

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