Description
Third generation power MOSFETs from INFINEON provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. At power dissipation levels of up to 50 W, the TO-220 package is universally recommended for all commercial-industrial applications. The TO-220's low heat resistance and low packaging cost contribute to its widespread use in the industry.
Features
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
Specification
| Model | IRF840 |
| Transistor Polarity | N-Channel |
| Brand | INFINEON |
| Drain-Source Voltage (Vds) | 500V |
| Continuous Drain Current(Id) | 5.1-8A |
| Drain Source Resistance (Rds on) | 0.85 ohms |
| Gate Source Voltage (Vgs) | 10V |
| Power Dissipation | 50W |
| Package Type | TO-220 |
| Country of Origin | China |