Description
An N-Channel MOSFET makes a current channel out of electrons. This makes it possible for electrons to pass swiftly and readily across the current when the MOSFET is turned on. Since of the unique properties of N-Channel MOSFETs, the P-Channel chip must be 2 to 3 times larger than the N-Channel chip because the mobility of the carriers is around 2 to 3 times higher for the same RDS(on) value. It is common practice to use MOSFET transistor N-Channels in high current applications because of this IRF7478 were created to improve effectiveness, cost-effectiveness, and power density. High switching frequencies have been tuned and are designed for high-performance applications.
Features
- RoHS Compliant
- Industry-leading quality
- Fast Switching
- Low Profile (less than 1.1mm)
- SOT-23 Footprint
Specifications
| Model | IRF7478 |
| Type | Power MOSFET |
| Package Style | SMD |
| Continuous Drain Current | 7 A |
| Power dissipation | 2.5 W |
| Resistance of Drain source | 30 mΩ |
| Operating Temperature Range | -65°C to 175°C |
| Gate-Source Voltage | 20V |
| Quantity | 100 |
| Country of Origin | China |