Description
IRFB20N50K is an N channel enhancement Power MOSFET with a low gate charge . And this MOSFET has improved gate, avalanche and dynamic ruggedness. It has fully characterized capacitance and avalanche voltage and current with low Rds(on) and simple drive requirements. The comprehensive portfolio addresses a broad range of applications including switch mode power supply, uninterruptible power supply, and high-speed power switching.
Features:
- Low gate charge Qg results in simple drive requirement
- Improved gate, avalanche, and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche voltage and current
- Low RDS(on)
Specifications
| Model | IRFB20N50K |
| Type of Transistor | MOSFET |
| Type of Control Channel | N -Channel |
| Maximum Power Dissipation (Pd) | 280 W at 25°C |
| Maximum Drain-Source Voltage |Vds| | 500 V |
| Drain Current | 20A |
| Maximum Gate-Source Voltage |Vgs| | 30 V |
| Total Gate Charge (Qg | 110 nC |
| Maximum Drain-Source On-State Resistance (Rds) | 0.21 Ohm |
| Packaging type | T0220 |
| Country of Origin | China |