Description
IRFZ34N International Rectifier's Fifth Generation HEXFETs use cutting-edge manufacturing methods to provide the lowest on-resistance per silicon area. This feature gives the designer a very effective device for usage in a range of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are widely known for. Ultra Low On-Resistance, Dynamic dv/dT Rating, 175°C Operating Temperature, Fast Switching, and Ease of Paralleling are all characteristics of advanced process technology.
Features
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Its fully avalanche rated
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It has designed by advanced process technology
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Its dv/dT rating
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Its operating temperature is 175 degree centigrade
- Its power dissipation is 56W
Specification
| Model | IRFZ34N |
| Type | Power MOSFET |
| Package | TO-220AB |
| Brand | International rectifier |
| Pulse drain current | 100A |
| Avalanche current | 16A |
| Soldering temperature | 300°C |
| Operating and Storage Temperature Range | -55°C TO 175°C |
| Country of Origin | China |