Description
It is an Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode. Co-packaged IGBTs are a natural extension of the well-known IGBT range from International Rectifier. They combine the features of an IGBT and an ultrafast recovery diode into a single device, making them ideal for a variety of high-voltage, high-current, motor control, UPS, and power supply applications.
Features
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Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20kHz in resonant mode).
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Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
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IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
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Industry standard TO-247AC package
Specification
| Model | IRG4PC50FD |
| Category | IGBT Transistors |
| Technology | Si |
| Max. Collector-Emitter Voltage | 600V |
| Mounting Style |
TO-247-3 |
| Max. Collector Current | 39A |
| Channel | N-Type |
| Max. Junction Temperature | 175°C |
| Pd - Power Dissipation | 200 W |
| Country of Origin | China |