Description
This Insulated Gate Bipolar Transistor (IGBT) has a sturdy and cost-effective Ultra Field Stop Trench construction. It provides excellent performance in demanding switching applications, with low on-state voltage and reduced switching loss. The IGBT is ideal for use in UPS and photovoltaic applications. A free-wheeling diode with a low forward voltage is also present. Fairchild's AND series of IGBTs uses NPT technology to produce reduced conduction and switching losses. The AND series provides a solution for induction heating (IH), motor control, general-purpose inverters, and uninterruptible power supplies (UPS)
Features
- High-speed switching
- Low saturation voltage : VCE(sat)= 2.6 V @ IC= 40A
- High input impedance
- CO-PAK, IGBT with FRD : trr= 75ns (typ.)
Applications
- Induction Heating, UPS, AC & DC motor controls and general
Specifications
| Model | FGL40N120AND |
| Brand | FSC/ONSEMI |
| Channel Type | N Channel |
| Max. Collector-Emitter Voltage | 1200V |
| Collector-Emitter Saturation Voltage | 2.6V |
| Max. Gate-Emitter Voltage | 25V |
| Max. Collector Current | 64A |
| Max. Junction Temperature | 150°C |
| Max Power Dissipation | 500W |
| Rise Time | 20ns |
| Package | TO-264 |
| Country of Origin | China |