P80NF55 (STP80NF55) N Channel Power MOSFET

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Description

P80NF55 power MOSFETs were created utilising STMicroelectronics' proprietary STripFET technology, which is especially engineered to decrease input capacitance and gate charge. As a result, the devices are suited for usage as the main switch in sophisticated high-efficiency isolated DCDC converters for telecom and computer applications, as well as applications with low gate charge driving requirements.

Features:

  • Its 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Specifications

Part Number P80NF55 
Package TO-220
Polarity N Channel 
Drain-Source Breakdown Voltage 55V
Continuous Drain Current 80A
Gate-Source Voltage 20V
Power Dissipation 300W
Gate Charge 155nC
Country of Origin China

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