Description
TK12A600 is a N-Channel MOSFET with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications.
Features
- Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.)
- High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.)
- Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
- Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Specifications
| Model | TK12A600N |
| Drain to Source Voltage (Vds) | 600V |
| Gte to source voltage (Vgs) | ±30V |
| Drain Current (Id) | 12A |
| Drain Power Dissipation (Pd) | 45W |
| Single Pulse Avalenche Energy | 359mJ |
| Avalanche Current | 12A |
| Repetitive Avalanche Energy | 4.5mJ |
| Channel Temperature | 150°C |
| Country of Origin | China |