Description
2SK3878 is a new generation high voltage MOSFET that employs an improved charge balance mechanism to achieve exceptional low on-resistance and lower gate charge performance. The cutting-edge technology has been designed to minimise conduction loss, provide improved switching performance, and withstand high dv/dt rates and avalanche energy. It is ideal for various AC/DC power conversions in switching mode operation for system miniaturization and higher efficiency.
Features
- Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.)
- High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)
- Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
- Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Specifications
| Model | 2SK3878 |
| Brand | TOSHIBA |
| Drain Source Voltage | 900V |
| Drain Gate Voltage | 900V |
| Gate Source Voltage | ±30V |
| Drain Current | 9A |
| Drain Power Dissipation | 150W |
| Max. Channel Temperature | 150°C |
| Package | TO-247 |
| Mounting | Through Hole |
| Country of Origin | China |