Description
The 2N2222 is an NPN bipolar junction transistor (BJT). Its used in low-power amplifying and switching applications. It is intended for low to medium current, low power, medium voltage, and relatively fast operation.
Features:
- Its bipolar NPN transistor
- Its current gain is 300hFE
- Its collector current is 800mA
- Its emitter base voltage is 6V
Specifications
Part Number | 2N2222 |
Type | Bi-Polar high current NPN Transistor |
Max DC Current Gain (hFE) | 300 |
Max. Continuous Collector current (IC) | 800mA |
Max. Emitter Base Voltage (VBE) | 6V |
Max. Collector Emitter Voltage (VCE) | 30V |
Base Current(IB) | 5mA maximum |
Country of Origin | China |